It puts forward the techniques of depositing hydrophobic thin films of the fluorocarbon polymer by ICP-CVD and the process factors of ICP-CVD.
利用ICP - CVD工艺制备出一种新型厌水性碳氟聚合物薄膜，并给出了制备薄膜的工艺参数。
The results show that formation of the precursor radicals and the growth mechanism in ICP-CVD with high electron density are different from those in conventional CVD with low electron density.
实验结果预示着在高电子密度的ICP CVD过程中，活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同。
The results show that formation of the precursor radicals and the growth mechanism in ICP-CVD with high electron density are different from those in conventional CVD with low electron density.
实验结果预示着在高电子密度的ICP CVD过程中，活性原子集团的形成以及薄膜的生长机理与传统的等离子体CVD过程不同。
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