A mathematical model of the I-V characteristics of single-electron transistors (SET's) is improved based on the orthodox single-electron theory.
基于正统单电子理论，提出了单电子晶体管的I - V特性数学算法改进模型。
Simulation results show that the model with channel-length modulation effects included agrees with the measured I-V characteristics in the saturation region.
计算结果表明，计入沟道长度调制效应后的直流模型在饱和区与实测的I-V特性较为吻合。
Comparing the I-V characteristic curve and the data of different points, when the Voltage of the original solar arrays mathematical model increases to 20v, the error will gradually increase.
对两套数学物理模型的I - V特性曲线和不同点的数据进行比较，发现原有的数学物理模型在电压增大到20v时，误差会逐渐变大。
Comparing the I-V characteristic curve and the data of different points, when the Voltage of the original solar arrays mathematical model increases to 20v, the error will gradually increase.
对两套数学物理模型的I - V特性曲线和不同点的数据进行比较，发现原有的数学物理模型在电压增大到20v时，误差会逐渐变大。
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