The accuracy grade of novel HVEM must be defined by integrated error calibration system.
新型高压电能表必须采用整体误差校验系统来定义准确度等级。
When using high voltage electron microscopes (HVEM), a large increase in section thickness is then possible.
运用高压电镜使得观察的切片厚度大大增加成为可能。
In-situ observation in HVEM is very important and available for crystal defect research in metals and other material.
高压电子显微镜的原位技术是研究金属和其他材料中晶体缺陷的一种重要的、有效的方法。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
The electron energy in HVEM was 1 MeV. The results of mean void density, mean void diameter, void swelling, swelling rate and incubation dose vs. dose and temperature are presented.
研究了平均孔洞密度、平均孔洞直径、肿胀、肿胀率同孕育剂量与温度的关系。
The electron energy in HVEM was 1 MeV. The results of mean void density, mean void diameter, void swelling, swelling rate and incubation dose vs. dose and temperature are presented.
研究了平均孔洞密度、平均孔洞直径、肿胀、肿胀率同孕育剂量与温度的关系。
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