Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。
Improvement of high frequency photoconductive decay technique for measuring silicon minority carrier lifetime is described.
本文介绍高频光电导衰减法硅单晶少子寿命测试技术的改进。
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