This accelerometer is fabricated by N type silicon wafer. To obtain high aspect ratio structure, deep reactive ion etching(DRIE) process is employed.
加速度计用普通的N型硅片制造，为了刻蚀高深宽比的结构，使用了深反应离子刻蚀（DRIE）工艺。
The low selectivity of masking materials is one of the restrictions on fabrication process of high aspect ratio of micro-structures.
掩蔽层材料选择比低是硅高深宽比微结构实现的限制之一。
The low selectivity of masking materials is one of the restrictions on fabrication process of high aspect ratio of micro-structures.
掩蔽层材料选择比低是硅高深宽比微结构实现的限制之一。
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