The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.
模拟得出栅极电流与实验结果符合，而得出的优化氮含量有待实验证实。
The results presented are consistent with experimental data, whereas a new finding for an optimum nitrogen content in HfSiON gate dielectric requires further experimental verifications.
模拟得出栅极电流与实验结果符合，而得出的优化氮含量有待实验证实。
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