The gate length may be larger than the minimum specified by semiconductor fabrication design rules.
栅极长度可以比半导体制造设计规则所指定的最小值大。
Under this way, the gate length and thickness of Si island of DG device show many different scaling limits for various elements.
在这种方法下，由于各种因素的影响，双栅器件的栅长、硅岛厚度呈现出不同的缩减限制。
While the gate length of PHEMT device is adequately short, the parasitic resistance across the width of the gate limits the PHEMT device performance.
当PHEMT器件的栅长缩短到足够短的时候，沿着栅宽方向的寄生电阻会影响PHEMT器件的性能。
Depending on the potential distribution in the conductive channel, the influence of changing gate length on the OSIT s operation characteristic is analyzed.
依据导电沟道内的电势分布，分析了栅极长度变化对OSIT工作特性的影响。
The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved.
在该T型栅工艺中栅长和栅帽的尺寸分别进行控制，实现了较好的工艺可控性和较高的工艺成品率。
The gate length and the dimension of the gate head can be controlled in the T-shaped gate processing, and good process controllability and high yield can be achieved.
在该T型栅工艺中栅长和栅帽的尺寸分别进行控制，实现了较好的工艺可控性和较高的工艺成品率。
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