A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.
栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。
The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。
The inverter can be manufactured with the insulation gate bipolar transistor module.
逆变器采用绝缘栅双极晶体管模块制造。
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