A gate electrode is formed to surround the vertical channel.
栅电极形成为围绕竖直沟道。
The gate electrode is formed on the gate insulating film and has a sidewall.
栅极电极在栅极绝缘膜上形成，并具有侧壁。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
The protection circuit on the input end has a gate electrode comprised of a band-like conductive film.
输入端的保护电路有由带状导电膜组成的栅电极。
A gate insulation layer may be interposed between the gate electrode and the fin of the semiconductor substrate.
栅极绝缘层置于所述栅极电极和所述半导体衬底的所述鳍之间。
A semiconductor device may include a semiconductor substrate, one common gate electrode, and one gate insulating layer.
该半导体器件的一种包括半导体衬底、公共栅极电极和栅极绝缘层。
In practical terms, this smallest feature was almost always the line that defined the gate electrode on the MOS transistor.
实际中，这个特性总是用来定义MOS晶体管的闸极电极走线。
A gate electrode may surround at least a portion of the fin of the semiconductor substrate. The gate electrode may be insulated from the semiconductor substrate.
栅极电极完全围绕所述半导体衬底的所述鳍的至少一部分并与所述半导体衬底绝缘。
Second, the island can also vibrate between the gate electrode and the back-gate electrode, and semi-classical model of two-dimensional vibrating EMSET is proposed;
其次研究了岛区可在双栅间振动的情况，提出了双栅间振动EMSET的半经典模型和两维振动EMSET的半经典模型；
Using the high-quality mica plate as substrate materials, a new gate electrode structure was fabricated successfully with silver slurry and simple screen-printing process.
利用优质云母板作为栅极结构基底材料，结合简单的丝网印刷工艺将导电银浆制作成条状栅极，制作了新型的栅极结构；
The Titanium silicide film has its potential advantage in forming a gate electrode and interconnection for VLSI because of its low resistivity and some other good characteristics.
硅化钛薄膜由于电阻率低和其它一些良好特性，在VLSI的栅电极和互连线中显示出它潜在的优势。
Sacrificial gate spacers are disposed on the sidewalls of the gate dielectric and gate electrode. Cavities are etched into the substrate extending under the sacrificial gate spacers.
牺牲栅电极间隔物设置在所述栅极电介质和所述栅电极的侧壁上，在所述衬底上蚀刻空腔，并且空腔在牺牲栅电极间隔物下方延伸。
A gate dielectric layer and a gate electrode are formed on the top surface, the opposing sidewalls of the fin and on the bottom and on the opposing sidewalls of the recess in the fin.
栅电介质层和栅极形成在鳍部的顶表面上、相对的侧壁上和鳍部内的凹陷的底部上和相对的侧壁上。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
Conventional transistors use a metal electrode, called the gate, to control the flow of electrons through a planar channel in the silicon substrate.
传统晶体管使用一个叫做“栅极”的金属电极，以控制电子在平面硅基片上的沟道中的流动。
Each gate-electrode layer is connected with a respective separate gate contact (154, 156).
每一个栅电极层与分开的栅接触极(154,156)相连。
The working properties depend on the gate bias voltage and the structure of pectinate Al electrode.
其工作特性依赖于栅极电压和梳状铝电极的结构。
The end player forms the anode, and the end n-layer is the cathode, while the player adjacent to the cathode forms the gate or trigger electrode.
端头的p层形成阳极，端头的n层是阴极，而与阴极相邻的p层形成门极（即触发极）。
The end player forms the anode, and the end n-layer is the cathode, while the player adjacent to the cathode forms the gate or trigger electrode.
端头的p层形成阳极，端头的n层是阴极，而与阴极相邻的p层形成门极（即触发极）。
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