This paper analyses the blocking voltage, forward voltage drop, photoresist mask design and gate-triggering and dynamic characteristics of high-power thyristors.
本文对大功率可控硅的阻断电压问题、正向压降问题、光刻掩模板的设计问题、控制极特性问题以及动特性问题进行了分析。
During t1 a reverse voltage must be maintained across the thruster and only after this time is the device capable of blocking a forward voltage without going into its on-state.
在t1期间，通过半导体闸流管维持一反向电压，并且正是在这之后，设备易于保持一正向电压，而无需开启电源。
During t1 a reverse voltage must be maintained across the thruster and only after this time is the device capable of blocking a forward voltage without going into its on-state.
在t1期间，通过半导体闸流管维持一反向电压，并且正是在这之后，设备易于保持一正向电压，而无需开启电源。
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