This work focus on the evolution ways to study the Nanocrystal floating gate non-volatile memory devices.
本文从改进型方案入手，研究了纳米晶浮栅结构的非易失性存储技术。
According to the structural feature of the floating gate, a nonlinear single - degree of harmonic oscillating model is set up.
根据浮体闸门的构造特征，建立了单自由度非线性振荡模型。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The DRAM further has a floating gate insulated from the surface and is positioned between the first region and the second region.
所述DRAM进一步包括与所述表面绝缘的浮栅，且位于所述第一区域和 所述第二区域之间。
The invention also discloses a fabricating method for the nanocrystal floating gate memory with the multi-media composite tunneling layer.
本发明同时公开了一种多介质复合遂穿层的纳米晶浮栅存储器的制作方法。
During a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.
在读取操作期间，该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
A new folded differential pair topology based on quasi-floating gate technique is presented, and an ultra-low voltage op amp based on this structure is designed.
提出了一种基于准浮栅技术的折叠差分结构，基于此结构设计，实现了超低压运算放大器。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
Under the nonlinear binding forces the oscillations of a large floating gate are discussed. The harmonious oscillations with large amplitudes on the gate are discovered in the scale model.
在模型试验时，发现巨型浮体闸门在非线性约束下有大幅度的谐和振荡。
Electrolyte: in gel state, no delamination, battery electrolyte circulation performance is good; The electrolyte density low, slow on board gate corrosion, floating battery life is long.
电解质：呈凝胶状态，电解液无分层、电池循环性能好；电解液密度低、减缓对板栅腐蚀，电池浮充寿命长。
This paper uses floating beds to plant cannas to purify heavily-polluted water in north gate section of Xi'an moat.
以西安护城河污染较严重的北门段水体为研究对象，利用浮床技术种植美人蕉净化重污染水体。
The LOP circuit module is described in gate level with VHDL, which has passed the logic simulation and verification. It is applied to the design of floating-point adder.
LOP电路设计采用VHDL语言门级描述，已通过逻辑仿真验证，并在浮点加法器的设计中得到应用。
A new die-casting die fit on cold chamber die casting machine was redesigned in the part of the center gate and floating flow-distribution.
分析了录音机芯飞轮压铸模的原设计失败的原因，重新设计了用于冷室压铸机的中心浇口、浮动分流的压铸模。
A dynamic gate floating ESD protection circuit is first analyzed and then designed according to the whole-chip ESD planning.
本文研究了一种基于动态栅极悬浮技术的ESD保护电路，并根据全芯片ESD防护的要求设计了试验电路。
Taking the engineering example, the design method and design point of bulkhead gate with muti-nodal floating pontoon are introduced.
结合工程实例介绍了多节浮箱式检修闸门的设计方法及设计要点。
The research includes design of the floating camel gate, design of the anti-seepage system beneath the floor of barrage and underwater concrete construction technology and so on.
本文结合该工程，开展大型浮体闸大孔径浮箱钢闸门设计研究制作以及水闸水下不分散混凝土和闸底部防渗系统设计及水下建造技术的研究。
As a kind of new and high-functionality technology, floating-gate technology has been paid much attention to recently.
浮栅技术作为一种高功能度的新技术，近年来受到了普遍的关注和重视。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
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