According to the structural feature of the floating gate, a nonlinear single - degree of harmonic oscillating model is set up.
根据浮体闸门的构造特征，建立了单自由度非线性振荡模型。
The threshold voltage of the transistor thus formed is controlled by the amount of charge that is retained on the floating gate.
如此形成的晶体管的阈值电压由保持在浮动栅极上的电荷量控制。
The DRAM further has a floating gate insulated from the surface and is positioned between the first region and the second region.
所述DRAM进一步包括与所述表面绝缘的浮栅，且位于所述第一区域和 所述第二区域之间。
During a read operation, the read transistor is activated to produce an output signal indicative of the charge stored in the floating gate node.
在读取操作期间，该读取晶体管被激活以产生指示储存在该浮置栅极节点中的电荷的输出信号。
Impact ionization arises from a charge injector (25), defining a virtual diode (30) in the substrate (20) of a floating gate charge storage transistor (11).
碰撞电离通过一在一浮栅电荷存储晶体管(11)的衬底(20)中限定一虚拟二极管(30)的电荷注入器(25)而产生。
Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
A new folded differential pair topology based on quasi-floating gate technique is presented, and an ultra-low voltage op amp based on this structure is designed.
提出了一种基于准浮栅技术的折叠差分结构，基于此结构设计，实现了超低压运算放大器。
The invention simultaneously discloses a production method of the nanocrystal floating gate non-volatile memory with the double-layer tunneling dielectric structure.
同时公开 了一种双层隧穿介质结构的纳米晶浮栅非易失存储器的制作方法。
In particular, as a non-volatile memory device undergoes many programming cycles, charge becomes trapped in the insulator or dielectric between the floating gate and the channel region.
特定来说，在非易失性存储器装置经历许多编程循环时，电荷变为俘获在浮动栅极与沟道区之间的绝缘体或电介质中。
Under the nonlinear binding forces the oscillations of a large floating gate are discussed. The harmonious oscillations with large amplitudes on the gate are discovered in the scale model.
在模型试验时，发现巨型浮体闸门在非线性约束下有大幅度的谐和振荡。
The charge storage characteristic of Ge/Si double-layer quantum-dots floating-gate nano-memory was investigated.
设计了一种新型的存储器结构单元———锗/硅双层量子点阵列浮栅结构纳米存储器。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
The neuron MOS transistor was invented in 1991. It is a high-functional floating-gate MOS transistor with multiple-input control-gates.
神经MOS晶体管是1991年发明出来的一种具有高功能度的多输入栅控制的浮栅MOS器件。
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