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The present invention relates to high performance three-dimensional (3d) field effect transistors (FETs).
本发明涉及高性能三维(3d)场效应晶体管(FET)。
youdao
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The present invention relates to high performance three-dimensional (3d) field effect transistors (FETs).
本发明涉及高性能三维(3d)场效应晶体管(FET)。
youdao