The inclusion of the distant boat along with the sandy beach in the foreground gives a good depth of field effect.
将远处小船摄入照片中，以及前景的沙滩，给人海天辽阔的良好效果。
The depth-of-field effect can improve the realistic sense of a computer-generated image, and thus rendering of this effect has become one of the important research topics in computer graphics.
景深效果能够增强计算机生成图像的真实感，因此关于这类效果的绘制已成为计算机图形学中的重要研究方向。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
A field effect transistor and a method of fabricating the field effect transistor.
场效应晶体管以及制造场效应晶体管的方法。
The invention is applied to improving the manufacture efficiency of the field effect transistor.
本发明应用于提高场效应晶体管的制造效率。
Research progresses of magnetic field effect on macromolecular conformation are reviewed in this paper.
对近年来有关磁场对大分子构象的影响研究进展进行了较全面综述。
The present invention relates to high performance three-dimensional (3d) field effect transistors (FETs).
本发明涉及高性能三维(3d)场效应晶体管(FET)。
Its structure is the same as a conventional metal insulator semiconductor field effect transistor (MISFET).
它的结构与普通金属—绝缘体—半导体场效应晶体管(MISFET)基本相同。
The mechanism of the impulse current magnetic field effect has been discussed by using a simple cell model.
通过简单的细胞模型，对其作用机理进行了初步的探讨。
Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor.
本发明的实施例涉及作为发光晶体管的纵向场效应晶体管。
The vacuum arc ignition process, the plasma diffusing and the axial magnetic field effect are also analyzed.
分析了真空电弧的引燃过程和起弧后等离子体的扩散过程以及纵向磁场对等离子体扩散的影响。
Field effect transistor, especially a double diffused field effect transistor, and method for the production thereof.
场效应晶体管，特别是双扩散场效应晶体管，及其制造方法。
This is why the single crystal pentacene based OTFT has higher field effect mobility than the polycrystalline device.
这也就解释了单晶otft器件具有比多晶器件更高的场效应迁移率的原因。
The field effect transistor includes: a silicon body, a perimeter of the silicon body abutting a dielectric isolation;
所述场效应晶体管包括：硅体，所述硅体的周边邻接介质绝缘物；
The mechanism of magnetic field effect on the nano particle nucleation and growth was discussed by crystal growth theory.
根据晶体生长理论，讨论了磁场影响纳米颗粒形核和长大过程的机理。
The new bipolar junction field effect transistor (BJFET) has the features of both bipolar and junction field effect devices.
新型双极结型场效应晶体管(BJFET)兼有双极型和单极场效应两种器件的功能特点。
The invention provides a field effect transistor device using a carbon nano tube as an electrode and a preparation method thereof.
本发明提供一种以碳纳米管为电极的场效应晶体管器件及其制备方法。
Patterning method, method of manufacturing organic field effect transistor, and method of manufacturing flexible printed circuit board.
图案形成方法，有机场效应晶体管的制造方法，以及柔性印刷电路板的制造方法。
These data and results are helpful to design and develop spin field effect transistor, spin light-emitting diode, spin resonant tunneling device, etc.
这些数据和结果有助于设计和研制自旋场效应晶体管、自旋发光二极管和自旋共振隧道器件等。
The program is applied to simulate the concentration distribution of leachate in landfill, which has been presented under coupling multi-field effect.
通过编制的计算程序，对多场耦合作用下填埋场内渗滤液的浓度分布进行了动态模拟。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
If this model will be incorporated into the black-oil model, it can match core flooding result of LPS deep profile control, it also can predict field effect.
把该模型结合到黑油模型中，可以进行LPS深部调剖的室内岩心驱拟合和矿场应用效果预测。
Environmental effect of city underlying cohesive soil can be summed up stress field effect, groundwater chemistry effect, thermal effect, electric effect, etc.
城市环境下粘性土环境效应通常可归纳为应力场效应、地下水水化学效应、热效应、电效应等方面。
Provided are an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor.
本发明提供氧化物半导体材料和其制造方法、电子装置和场效应晶体管。
The formation mechanism of thrust tectonics in the Paleogene was supposed to be related to a far field effect caused by collision between the Indian and the Eurasian plates.
古近纪末期逆冲构造形成机制与印度板块向欧亚板块之下俯冲的远程效应有关。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
A hetero-structure field effect transistor (HFET), may include a first layer (3) made from a first semiconductor material and a second layer (4) made from a second semiconductor material.
一种异质结构场效应晶体管(HFET)，可以包括由第一半导体材料制成的第一层(3)和由第二半导体材料制成的第二层(4)。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
The invention belongs to the technical field of a microelectronic device, and more particularly discloses an asymmetrical source-drain field effect transistor and a preparation method thereof.
本发明属于微电子器件技术领域，具体公开了一种不对称型源漏场效应晶体管及其制备方法。
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