The present invention relates to high performance three-dimensional (3d) field effect transistors (FETs).
本发明涉及高性能三维(3d)场效应晶体管(FET)。
The high precision resistor is composed of three NMOS FETs with controllable gate voltage and aspect ratios.
通过控制各MOS 管的栅电压和宽长比可得到线形度较好的高精度电阻器。
The power FETs are more and more widely used in radio-frequency power amplification in all-solid state transmitter.
场效应功放管在全固态发射机的射频功放中应用得越来越广泛。
Based on his work experience, the author puts forward a method and operation procedure for replacing final power FETs for the colleagues' reference.
本文作者通过自己在工作中的摸索和积累，总结出了一套更换末级场效应功放管的方法和操作步骤，以供同行参考。
As final power FETs are very expensive, the antistatic requirement is quite high in replacing damaged FETs. A misoperation would destroy FETs and cause loss.
由于末级场效应功放管价格昂贵，当管子损坏需要更换时，对防静电的要求很高，一旦操作不当就会损坏管子，造成损失。
Considering LDMOS FETs high gain, high output power, low power loss and efficient heat dissipation, a S-band, 45w and 180w solid state power amplifier is designed.
基于LDMOSFET的高增益、高输出功率、低功耗和良好的散热特性，分别设计了S波段45w和180w固态功率放大器。
Considering LDMOS FETs high gain, high output power, low power loss and efficient heat dissipation, a S-band, 45w and 180w solid state power amplifier is designed.
基于LDMOSFET的高增益、高输出功率、低功耗和良好的散热特性，分别设计了S波段45w和180w固态功率放大器。
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