For fabricating the nonvolatile ferroelectric memories (FERAM), one of the keys is to make the integrated ferroelectric capacitors.
在铁电不挥发存储器(FERAM)技术中，集成铁电电容的制备是关键工艺之一。
More than 200 times faster to access than flash memory, FeRAM is a type of nonvolatile memory that has many possibilities for use as next-generation semiconductor memory.
铁电存储器的存储速度比闪存的存储速度快200多倍，是一种极有可能成为下一代半导体存储器的非易失性存储器。
More than 200 times faster to access than flash memory, FeRAM is a type of nonvolatile memory that has many possibilities for use as next-generation semiconductor memory.
铁电存储器的存储速度比闪存的存储速度快200多倍，是一种极有可能成为下一代半导体存储器的非易失性存储器。
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