The results show that the etching rate depends strongly on plasma composition and the RF bias voltage, but rather weakly on the gas flow rate.

结果表明刻蚀气体的组分和射频偏压对刻蚀速率有较大影响，而气体流量影响不大。

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Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.

因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。

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Therefore, plasma etching anisotropy can be improved by increasing rf frequency or rf-bias power.

因此，等离子体刻蚀的各向异性可以通过增加射频频率和射频功率来改善。

youdao