The thick SOI films were prepared by SIMOX technology and Si epitaxy process.
利用SIMOX技术和硅外延工艺制备了厚膜SOI材料。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.
结果表明，低温外延是制备较高质量外延层的一种可取方法。
The results indicate that the low temperature epitaxy process is an acceptable method for the preparation of device quality GaAs layers.
结果表明，低温外延是制备较高质量外延层的一种可取方法。
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