Based on the photoconductive method the Energy Gap Measuring Device for Semiconductor Material-Type DB-1 has been developed.
根据光电导方法，研制了DB - 1型半导体材料禁带宽度测试装置。
The invention provides a method for increasing the energy band gap of a hydrogenated amorphous silicon thin film, which adds fluorine elements into the amorphous silicon materials.
本发明的提供了一种增加氢化非晶硅薄膜能带隙的方法，将氟元素加入到非晶硅材料中。
The invention provides a method for increasing the energy band gap of a hydrogenated amorphous silicon thin film, which adds fluorine elements into the amorphous silicon materials.
本发明的提供了一种增加氢化非晶硅薄膜能带隙的方法，将氟元素加入到非晶硅材料中。
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