The single-electron transistor is a kind of newly found fascinating device in recent years.
单电子晶体管是几年前才发现的一种功能奇特的新型器件。
Based on the orthodox theory, a model of a single electron transistor (SET) of metallic tunneling junctions is built using the master equation method.
在正统理论的基础上，使用主方程法建立了金属结单电子晶体管的器件模型和算法流程。
If the tunnel junction capacitance becomes larger, the amplitude of the I-V curve of single-electron transistor becomes smaller, but the period is unchanged.
同时，单电子三极管I-V曲线的振幅随着隧道结电容的增大而减小，但I-V曲线的周期保持不变。
The generation mechanisms of these physical phenomena of Coulomb blockade, Coulomb staircase, single electron tunneling were described with single electron transistor(SET) as the research object.
以单电子晶体管为研究对象，系统阐述了库仑阻塞、库仑台阶、单电子隧穿等物理现象的产生机理。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
They then defined the transistor channel using electron-beam lithography, removing graphene outside of channel regions with an oxygen plasma.
然后在氧等离子体中用电子束刻蚀法去除沟道区石墨烯形成晶体管的沟道。
A while back Dutch scientists managed to create a nanotube activated transistor that could toggle on and off with the flow of a single electron.
前阵子荷兰科学家成功创造出依靠单个电子进行开关的碳纳米管晶体管。
A theoretical analysis of a remote gate quantum transistor and a middle gate quant (?) m transistor based on a T-shape electron waveguide is presented.
对两种T型电子波导器件即遥控栅量子晶体管和中间栅量子晶体管进行了理论研究。
As an example, an electron wave diffraction transistor is presented, including its principle, structure, performance and its fabrication.
作为一个例子，介绍了电子波衍射晶体管的原理、结构、制造和性能。
The field of electronics includes the electron tube, transistor, integrated circuits and so on.
电子学的范围包括电子管、晶体管和集成电路等。
Examples include the laser, the transistor, the electron microscope, and magnetic resonance imaging.
例子包括激光、体管、子显微镜和磁共振成像。
The present invention can reduce the hot electron effect in low-temperature polysilicon film transistor effectively and raise the stability of low-temperature polysilicon film transistor obviously.
运用本发明，可有效地降低公知低温多晶硅薄膜晶体管的热电子效应，使得低温多晶硅薄膜晶体管在工作时的稳定性能够有明显的改善。
High - Electron Mobility Transistor?
高电子活动性晶体管HEMT ？
High - Electron Mobility Transistor?
高电子活动性晶体管HEMT ？
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