By changing the composition of the semiconductor materials, it is possible to determine the amount of energy given up by each electron, and hence the light's colour.
改变半导体材料的构成可以改变电子能量释放的多少，从而改变光的颜色。
In lab the most often used is electron multiplier and semiconductor type.
实验室常用的是电子倍增器和半导体型光二极管。
This paper reviews electron transport effects and study progress on low dimensional semiconductor structures such as superlattice, quantum wire and quantum dot.
文中介绍了超晶格、量子线与量子点等低维半导体结构中的电子输运效应及其研究进展。
And the materials, theories and manufacture techniques adopted by different semiconductor electron device are compared.
分别比较了不同的半导体电子器件的材料、理论和所采用的制备技术。
This paper reviews two dimensional electron gas formed on the liquid helium surface, the semiconductor surface space charge layer and the compound semiconductor heterojunction interface.
本文简要介绍了液氦表面、半导体表面空间电荷层和化合物半导体异质结界面的二维电子气。
This result has been explained properly by combined with theories of solar cell and electron irradiation effect of semiconductor.
结合太阳电池理论和半导体材料的电子辐照效应给出了合理的解释。
By using the adsorption of gas probe, we can understand the surface or interface electron character of functional semiconductor in micro-nano region in essentially from a new point of view.
揭示了半导体表面微钠区城原子结构对其微纳区域表面和界面电子特性的影响，为认识半导体微纳区域表面和界面电子行为提供了新思路。
The service industries cover automobile, electron, semiconductor, photo-electricity, communication, spaceflight, machine, and laboratories, etc.
客户产业涉及于汽车、电子、半导体、光电、通讯、航天、机械、实验室…等科技产业；
The processes of energy transfer of semiconductor surface irradiated by picosecond laser pulses are studied. Discussion is focussed on energy transfer from the electron-hole plasma to the lattice.
在皮秒脉冲激光辐照时，半导体材料表面的能量转换过程中，重点讨论能量从电子-空穴等离子体到晶格的转换过程。
The coarse silicon tetrafluoride can be finally purified to the purity of more than 99.5% by the invention, thereby the use requirements of electron and semiconductor trades are completely satisfied.
本发明最终可将粗四氟化硅的纯度提纯至99.5%以上，完全满足电子和半导体行业的使用要求。
The smallest unit that supports electron flow in a semiconductor material ; a hole in P-type silicon or a free electron in N-type silicon.
多数载流子-一种载流子，在半导体材料中起支配作用的空穴或电子，例如在N型中是电子。
The measurement accuracy of electron beam by using semiconductor detector is easily affected by beam energy, dose rate, beam incidence direction, environment temperature etc.
电子束半导体探测器的测量精度易受到射线的能量、剂量率、入射方向和环境温度等条件的影响。
The heterojunction barrier controlled ballistic electron transistor-a novel three terminal semiconductor device which could be operated competently at millimeter wavelength frequency is proposed.
本文提出一种能在毫米波很好工作的三端半导体器件—异质结势垒控制飞的电子晶体管（简称势垒飞越晶体管）。
The acceptor atoms are required to have one less valence electron than the semiconductor.
受主原子必须比半导体元素少一价电子。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
Most of the fabrication methods of silicon single-electron transistors can be perfectly compatible with the si complementary metal-oxide-semiconductor (CMOS) technology.
大多数硅基单电子晶体管的制备方法可以很好地与主流的CMOS工艺兼容。
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