A spacer (23) is formed on only the drain side of the electrode.
只在该栅电极的漏侧形成一个隔层(23)。
The expression of the electrostatic force which drives the island considers the function of the gate electrodes and the initial capacitances besides the effect of the drain-source electrode.
在岛区受到的静电力的表达式中，除了包括漏源电极的作用外，还考虑了双栅电极和系统初始电容值的影响。
As a switching device, TFT in AMLCD operates in saturation mode. Its source contact is always connected to the data bus (video), and the drain to the pixel electrode.
作为开关器件，AMLCD中的TFT工作在饱和模式，其源极总是连接数据总线(视频)，漏极接像素电极。
A source region and a drain region are formed in the fin at the opposite sides of the gate electrode.
源区和漏区形成在鳍部内栅极的相对侧处。
The high-voltage capacitor structure comprises a two-step diffusion drain electrode structural layer, an oxide layer and a polycrystalline silicon layer.
高压电容结构包括双重扩散漏极结构层、氧化层及多晶硅层。
The oxide layer is formed on the two-step diffusion drain electrode structural layer and completely superposed on the two-step diffusion drain electrode structural layer.
氧化层是形成于双重扩散漏极结构层上，且氧化层完全重叠于双重扩散漏极结构层上。
The virtual storage unit line comprises a second conduction type source electrode region and a second conduction type drain electrode region.
虚拟存储单元行包括第二导电型源极区和第二导电型漏极区。
The two-step diffusion drain electrode structural layer is used for serving as a lower electrode plate of a high-voltage capacitor.
双重扩散漏极结构层用以作为一高压电容的下电极板。
The two-step diffusion drain electrode structural layer is used for serving as a lower electrode plate of a high-voltage capacitor.
双重扩散漏极结构层用以作为一高压电容的下电极板。
应用推荐