High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
Semiconductor devices. Discrete devices and integrated circuits. Part 8: field-effect transistors.
半导体器件。分立器件和集成电路。第8部分：场效应晶体管。
The present invention relates to high performance three-dimensional (3d) field effect transistors (FETs).
本发明涉及高性能三维(3d)场效应晶体管(FET)。
A voltage controlled linear resistor which consists of only two field-effect transistors (FET) is presented.
本文提出了一种用两个场效应管实现的压控线性电阻电路。
Recently much work has been done to characterize Ion-Sensitive Field-Effect Transistors(ISFET) based on MOS technology.
近年来对基于MOS技术制造的离子散场效应晶体管（ISFET）的特性研究做了大量的工作。
A simple test system has been prepared to test the carbon nanotube field effect transistors, base on the electrical properties.
根据对碳纳米管场效应晶体管的电学特性的研究，搭建出一套简单的测试系统，对制备的器件进行了初步测试。
Optimization of the organic crystal fabrication process is important for obtaining the high performance of organic field-effect transistors (OFETs).
优化有机晶体的生长工艺是获得性能优良的有机场效应管（OFET）的重要基础。
Modern voltage references are constructed using the energy - band - gap voltage of integrated transistors, buried zener diodes, and junction field - effect transistors.
现代电压基准建立于使用集成晶体管和带状能隙基准、掩埋齐纳二极体和结场效应晶体管。
High electron mobility transistors (HEMT) is one of field effect transistors, which is made by modulation doped heterostructure technology and possess super high electron mobility.
高电子迁移率晶体管(HEMT)是利用异质结和调制掺杂技术制成的具有超高迁移率的场效应晶体管。
Semiconductor diodes bipolar junction transistors field-effect transistors transistor amplifiers frequency response operational amplifiers differential and multistage amplifiers integrated circuits.
半导体、二极体、双极电晶体、场效电晶体、电晶体放大器、频率响应、算放大器、差动及多极放大器、积体电路。
In small size power VDMOS transistors, the cause of quasi-saturation effect has been investigated and simulated by software.
分析了功率VDMOS晶体管在小尺寸时准饱和效应的成因，并对其进行了理论证明和模拟验证。
The testing objects of the instrument are low power transistors, including the common diode, the bipolar transistor, the field effect transistor and so on.
本仪器测试的对象为小功率晶体管，包括：各种二极管、双极性三极管、场效应管等。
In this paper, a new lumped elements latchup model consisting of four bipolar transistors is used to analyze the latchup effect of CMOS inverters in transient radiation environment.
本文采用较全面的包括四个寄生双极晶体管和MOS管的闩锁模型，详细分析了瞬态辐照下CMOS反相器的闩锁效应。
We designed a few kind of spin transistors based on the spin_dependent resonant tunneling effect of the DBMTJs.
由此，设计了一种基于这种双势垒磁性隧道结隧穿特性的自旋晶体管。
Experiment using discrete bipolar transistors has been performed to verify the effect of the photocurrent compensation method.
采用标准分立双极元件，对双极晶体管瞬态辐射光电流分流补偿法进行了实验验证。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
Total-dose irradiation effect of partially-depleted NMOS transistors with gate-all-around and H-gate structures fabricated on modified SIMOX was studied.
研究了在改性注氧隔离（SIMOX）材料上制备的具有环栅和H型栅结构的部分耗尽NMOS晶体管在三种不同偏置状态的总剂量辐照效应。
应用推荐