The memory device includes M normal word line drivers, a dummy word line driver, a memory array, N sense amplifiers, and a timing control circuit.

所述存储器装置包括M个正规字线驱动器、虚设字线驱动器、存储器阵列、N个读出放大器和时序控制电路。

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The memory array includes M rows and N columns of memory cells and a column of dummy cells.

所述存储器阵列包括M行和N列存储器单元以及列虚设单元。

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The memory array includes M rows and N columns of memory cells and a column of dummy cells.

所述存储器阵列包括M行和N列存储器单元以及列虚设单元。

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