Once data has been written in DRAM, charges stored in each capacitor must maintain more than the refresh time so that the information stored in each DRAM cell can be read out correctly.

数据一旦被写进DRAM，每个小电容上电荷的存储时间就必须大于DRAM的刷新脉冲时间，如果由于漏电流致使存储的电荷丢失，就会导致数据读取的误操作。

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Once data has been written in DRAM, charges stored in each capacitor must maintain more than the refresh time so that the information stored in each DRAM cell can be read out correctly.

数据一旦被写进DRAM，每个小电容上电荷的存储时间就必须大于DRAM的刷新脉冲时间，如果由于漏电流致使存储的电荷丢失，就会导致数据读取的误操作。

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