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  • The characteristics of the total dose radiation responses of CMOS amplifiers with normal and F-implanted process were studied and compared.

    本文研究了注氟（F）与未注F两种不同工艺CMOS运算放大器电路的电离辐照响应特性及变化规律。

    youdao

  • The characteristics of the total dose radiation responses of CMOS amplifiers with normal and F-implanted process were studied and compared.

    本文研究了注氟（F）与未注F两种不同工艺CMOS运算放大器电路的电离辐照响应特性及变化规律。

    youdao

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