It is because of microstructure refinement, an increase in boundaries and dislocation multiplication.
阻尼性能提高是由于组织细化、界面增多以及位错增殖所致。
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。
The net stress is a driving force of misfit dislocation multiplication and is a very important factor for strained MQWs stability.
净应力是失配位错增殖的驱动力，是应变多量子阱稳定的重要判据。
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