Electrons are injected into the floating gate by applying a high voltage to the second impurity diffusion layer in capacitive coupling with the floating gate.
通过在与浮栅电容耦合的第二杂质扩散层上施加高电压对浮栅注入电子。
Taking account of the disadvantage of current P-type impurity diffusion technology, an open tube gallium-aluminium diffusion technology is investigated.
就现行P型杂质扩散工艺的不足，进行了开旮铝镓掺杂技术的研究。
In this process the students learned "How the impurity affects the melting point and boiling point" and "the factors affecting the rate of diffusion" by doing experiments themselves.
因此在本单元的学习过程中，学生通过实验的方式对其中的两个知识点“杂质对纯物质熔沸点的影响”和“影响扩散速率的因素”进行了学习。
A first impurity diffusion layer, which occupies a space within the semiconductor substrate, is provided separately apart from the floating gate by a predetermined distance.
在浮栅的两侧壁上，设置侧壁绝缘膜。第一杂质扩散层设置在半导体基板内，并与浮栅仅离规定的距离。
In the confinement range the impurity diffusion coefficient is much higher than that estimated with new-classical theory.
而约束区杂质粒子输运则比新经典的值大很多，是反常的。
In the confinement range the impurity diffusion coefficient is much higher than that estimated with new-classical theory.
而约束区杂质粒子输运则比新经典的值大很多，是反常的。
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