The reliability of strain silicon, gate dielectric and copper interconnection are discussed, and some new researches are presented.
简介了应变硅材料、栅介质的工艺及铜互连的可靠性，并对新的研究方向做了介绍。
The piezoelectric strain coefficient and the dielectric constant of PVDF films increased, and the dielectric loss decreased with the increasing of the polarization field.
随着极化电场的升高，PVDF压电薄膜的压电应变系数升高，介电常数升高，介电损耗降低。
The piezoelectric strain coefficient and the dielectric constant of PVDF films increased, and the dielectric loss decreased with the increasing of the polarization field.
随着极化电场的升高，PVDF压电薄膜的压电应变系数升高，介电常数升高，介电损耗降低。
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