A dielectric Withstand tester (also called hipot tester, dielectric strength tester, flash tester, high voltage tester) is then used to measure this current.
电气强度测试仪(也称为耐压测试仪，电介质强度测试仪，闪点测试器，高压测试仪)是用来测量此类电流值的测试仪。
This parameter is the current flowing through the sample subjected to the dielectric.
此参数受电流所通过的样品中的电介质的影响。
The Dielectric Withstand test consists in measuring the current leak of a device under test, while phase and neutral are short circuited together.
电气强度试验包括在测试过程火线和地线同时短路的情况下测量被测设备的漏电量。
In cases where this practice is unavoidable, it may take minutes or even hours in some cases for the current caused by dielectric absorption to dissipate.
在实际工作无法避免这种情况时，可能需要经过几分钟、有时甚至几个小时，介电吸收引起的电流才会消散。
To ensure low leakage current and low dielectric absorption, the feed back capacitor should be made of a suitable dielectric material such as poly styrene, polypropylene, or Teflon.
为了保证低泄漏电流和低介电吸收，反馈电容器应当由合适的介电材料(如聚苯乙烯、聚丙烯或聚四氟乙烯)制成。
The machine contain main functions of above four testing apparatus, it can automatic test leaking current, grounding electric resistance, dielectric intensity, resting voltage and print testing data.
具备四种测试仪的全部主要技术性能，可连续自动测试漏电流、接地阻抗、电介质强度、剩余电压。可打印测试数据。
The influence of peak current on finishing high-speed wire electrical discharge machining (WEDM) in gas and emulsion dielectric is studied.
研究了在大气和乳化液两种介质中，峰值电流对高速走丝电火花线切割加工的影响。
Dielectric constant polarization coercive voltage and leakage current have relations with the thickness of thin films because of the interface layer.
界面层的存在使介电系数、自发极化、矫顽电压、漏电流都与薄膜的厚度有关。
The experimental results indicate that the dielectric barrier discharge will show different forms and discharge current waveforms by fixing or rotating the grounding electrode.
实验的结果表明：接地电极静止或转动介质阻挡放电将呈现不同的放电形式和电流波形。
A mathematical model of transient electric field is deduced, which takes dielectric polarization loss and displacement current into account.
推导出了考虑介质极化损耗和位移电流情况下暂态电场计算的数学模型。
The effect of time lag causes the TBR to last out a long period after current zero, thus influencing the process of dielectric recovery.
热滞止效应使热区在电流零后可维持较长时间，从而造成了对介质恢复过程的影响。
To minimize the effects of dielectric absorption on current measurements, avoid applying voltages greater than a few volts to insulators being used for sensitive current measurements.
为使电流测量时的电介质吸收影响减到最小，用来做对极小的电流测量的绝缘体，应避免施加大于数伏的电压。
Different dielectric material, metal wire separation, metal level separation and current density for impact of multilevel metal interconnects are calculated in detail.
研究了多层金属互连网络的热学模型，详细计算了不同的介质材料、金属线间距、金属层间距和电流密度对多层金属互连线温度分布的影响。
The background current, the dc electric conductivity and the apparent dielectric constant of KLiSO4 single crystal exhibit sharp peaks besides jump nearby the transition temperature.
在相变温度附近，本底电流、直流电导率和表观介电常数除发生跃变外还出现一个尖锐的小峰。
Other typical low current measurements on wafer level semiconductors are related to the dielectric, either the oxide or compound quality.
另一些对于晶圆片级半导体的弱电流测量则通常与介电材料(氧化物或化合物)的质量有关。
The secondary electron emission from the dielectric layer makes the discharge current increase.
绝缘介质层的二次电子发射，使放电电流增大。
In high frequency, it also have conductance at dielectric material due to dissipation factor of the dielectric material causing the current leakage.
介质电导的存在，是由于介质的耗散因子的存在，使得再高频下，传输线存在漏电流。
Because of their higher dielectric constant, they are particularly suitable for use as an impregnant for low voltage, direct current, and impulse capacitors.
因其介电常数较高，特别适用于作低压、直流、脉冲电容器浸渍剂。
The method can avoid multicrystal silicon residue between the sidewall of the dielectric layer and the dielectric layer, thereby preventing leakage current.
本方法避免在介电层的侧壁以及介电层之间产生多晶硅残留，防止漏电流发生。
According to the main factors for the main factors for the dielectric breakdown, this article presents the capacity index problem for the alternating current pressurization breakdown equipment.
根据影响介质击穿的主要因素，阐述了交流耐压击穿装置的容量指标问题。
Imperfections in the board's dielectric properties can provide parasitic-leakage-current paths.
电路板介电性能的缺陷会给寄生漏电流提供路径。
Imperfections in the board's dielectric properties can provide parasitic-leakage-current paths.
电路板介电性能的缺陷会给寄生漏电流提供路径。
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