The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.

所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。

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The nonvolatile memory device may include a string selection transistor, a plurality of memory transistors, and a ground selection transistor between a bit line and a common source line.

所述非易失性存储装置可以包括在位线和共源线之间的串选择晶体管、多个存储晶体管和地选择晶体管。

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