The most accurate ray-tracing model is used firstly on the development simulation of resist exposed by electron beam.
在电子束曝光胶图形的三维显影模拟工作中，首次使用了最精确的三维线踪模型。
The most accurate ray-tracing model is used firstly on the development simulation of resist exposed by electron beam.
在电子束曝光胶图形的三维显影模拟工作中，首次使用了最精确的三维线踪模型。
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