The parameter of the defect size distribution is deduced according to the relations of the defect and the fault.
再利用缺陷与故障之间的关系，进一步推导出缺陷粒径分布的参数。
A detection method for obtaining the micro bulk defect size in semiconductive materials by analyzing near infrared laser scattering light distribution is presented.
提出了利用近红外激光散射光强分布分析来检测半导体材料内部微体缺陷的检测方法。
Method Design the flaps along the distribution of saphenous nerve based on the size of defect, and repair the defect of soft tissue defect around knee.
方法根据缺损的范围以隐神经分布的区域设计皮瓣，修复膝前软组织缺损。
Then, based on mathematical morphological, it extracts the density of defects and the model distribution of the defect size also.
然后基于数学形态学方法提取出薄膜表面缺陷的密度；最后给出了薄膜表面缺陷粒径的分布模型。
The result showed that the size and character of the defect was obtained through infrared temperature testing and simulated temperature distribution, and the accidents were avoided.
研究结果表明，通过红外温度检测及模拟温度场，可以有效地检测内部缺陷的性质及大小，从而预防和避免事故发生。
Models of the defect outline, the spatial distribution and the size distribution statistics are described in the paper.
文章主要对缺陷的轮廓模型、空间分布模型和粒径分布模型作了介绍；
Models of the defect outline, the spatial distribution and the size distribution statistics are described in the paper.
文章主要对缺陷的轮廓模型、空间分布模型和粒径分布模型作了介绍；
应用推荐