Some important parameters such as defect concentration induced by electron irradiation are calculated.
文中还计算了电子辐照在硅中所产生的缺陷浓度等一些重要参数。
The production kinetics of thermal defects is discussed. The formula for thermal defect concentration has been derived.
本文讨论了热缺陷的产生动力学过程，给出了热缺陷浓度的公式。
On the other hand, ionic diffusion may cause deviation of defect concentration from its stoichiometric equilibrium value.
另一方面，离子扩散可能导致缺陷浓度在平衡位置的偏离。
The dielectric loss is measured to study the variation of defect concentration in doped ceramics. And the mechanism of doping is analyzed.
利用介电损耗峰随掺杂量的变化，研究了缺陷浓度在掺杂材料中的变化，以此来研究掺杂对铁电性能的影响机制。
Point defect is the most fundamental but the most important one of crystal defects, existing at a certain concentration in all materials.
点缺陷是最基本的也是最重要的一类晶格缺陷，材料中或多或少的都存在一定浓度的点缺陷。
This paper researches the effects of undercut defect on stress concentration in welding joint of pressure pipe by means of the finite element method software ANSYS.
从数值模拟入手，采用大型有限元软件A NSYS研究了不同尺寸、不同位置的咬边缺陷对压力管道焊接接头应力集中系数的影响。
This paper researches the effects of undercut defect on stress concentration in welding joint of pressure pipe by means of the finite element method software ANSYS.
从数值模拟入手，采用大型有限元软件A NSYS研究了不同尺寸、不同位置的咬边缺陷对压力管道焊接接头应力集中系数的影响。
应用推荐