In deep submicron era, IC design in physical design has more and more challenge, with the increasing design scale, faster clock frequency and minimizing process dimension.
在深亚微米时代，随着设计规模变大，时钟频率越来越高以及工艺尺寸的减小，IC物理设计面临着诸多困难。
Since deep submicron manufacturing process is widely used in microprocessors, transient faults have become the main source of chip faults.
随着深亚微米工艺的广泛应用，瞬态故障已成为芯片失效的主要原因。
Since deep submicron manufacturing process is widely used in microprocessors, transient faults have become the main source of chip faults.
随着深亚微米工艺的广泛应用，瞬态故障已成为芯片失效的主要原因。
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