The experimental results demonstrate that DDCVSL and SABL all have a high DPA-resistance with the shrinking channel-length of the transistors.

实验结果表明，随着晶体管沟道长度的减小，内部节点电容对功耗恒定特性的作用逐渐减小，DDCVSL与SABL具有相近的防DPA攻击特性。

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The experimental results demonstrate that DDCVSL and SABL all have a high DPA-resistance with the shrinking channel-length of the transistors.

实验结果表明，随着晶体管沟道长度的减小，内部节点电容对功耗恒定特性的作用逐渐减小，DDCVSL与SABL具有相近的防DPA攻击特性。

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