The quality requirements on si wafer for modern ULSI, research progress on CZ si crystal growth technology and wafer processing, the market situation and prospect were outlined.
概述了现代特大规模集成电路对硅单晶片的质量要求、直拉硅单晶生长工艺及晶片加工技术研究进展和硅单晶材料市场现状及发展趋势。
In this paper, oxygen precipitates and induced defects in annealed dislocation-free CZ-Si with high oxygen content have been investigated by HVEM.
本文用超高压透射电子显微镜研究退火的高氧含量无位错直拉硅单晶中氧沉淀和诱生缺陷。
Because the quantitative analysis of oxygen can't be done by general equipment, it is still lack of systematically investigation of precipitates and induced defects in heavily doped Cz-si.
但由于重掺硅中氧浓度定量测试受到方法限制，重掺硅单晶氧沉淀及其诱生缺陷至今未得到全面而深入地研究。
Prolonging the annealing time to 20h, there was obviously distinction of speed of oxygen precipitate between the samples of irradiated and non-irradiated CZ-Si.
延长退火时间辐照样品和未辐照样品的间隙氧沉淀速度有很大的不同。
Prolonging the annealing time to 20h, there was obviously distinction of speed of oxygen precipitate between the samples of irradiated and non-irradiated CZ-Si.
延长退火时间辐照样品和未辐照样品的间隙氧沉淀速度有很大的不同。
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