Theoretic analysis results show that the doping concentration and junction depth are main factors for the range of spectrum response of Si color sensor with double PN junction.
通过理论分析得出硅双结型色敏器件中掺杂浓度和两个结的结深是影响光谱响应范围的主要因素。
A system of measuring light power and wavelength is designed and fabricated, using Silicon Color Sensor with double PN junction as detector, single chip processor as controller and PC as processor.
设计并实现了一种用硅双结色敏器件作为探测器，单片机作为控制器，PC作为处理器和显示器的光功率、波长同步测量系统。
A system of measuring light power and wavelength is designed and fabricated, using Silicon Color Sensor with double PN junction as detector, single chip processor as controller and PC as processor.
设计并实现了一种用硅双结色敏器件作为探测器，单片机作为控制器，PC作为处理器和显示器的光功率、波长同步测量系统。
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