When the channel is activated, it increases the production of nitric oxide in the blood vessels that is believed to protect against inflammation and other vascular problems.
当这一通道被激活，就会增加血管中氧化一氮的含量，而氧化一氮被认为是能够抵御炎症和其他血液问题的重要成分。
The first important thin film from the thermal oxide group is the gate oxide layer under which a conducting channel can be formed between the source and the drain.
第一个重要的来自热氧化组薄膜是栅氧化层，在它之下，源和漏之间就能形成导电通道。
Thus, the relationships of oxide charge generation, including electron trapping and hole trapping effects, with different stress voltages and channel lengths are analyzed.
然后对不同应力电压、不同沟道长度下氧化层陷阱电荷（包括空穴和电子陷阱俘获）的产生做了进一步的分析。
The simulated results indicate that thinner and longer channel can reduce short channel effects, while thicker gate oxide will lead to higher subthreshold slopes.
模拟结果显示：越细长的沟道，器件的短沟效应越弱，器件的亚阈值斜率随栅氧化层增厚而加大。
The traps are easily generated because of poor quality of TEOS. Besides, high electric field due to the horn of the channel could seriously damage the tunneling oxide.
再加上因为通道尖角造成的局部大电场会对穿隧氧化层造成极大的伤害，所以特性并不理想。
For double channel implantations with different depths, different contributions of the implanted impurities during oxide diffusion to the surface concentrations are studied in the paper.
分别考虑了深浅两次沟道区注入杂质在氧化扩散过程中对表面浓度的贡献。
A control gate having a thin gate oxide film is formed over a center channel portion of the channel region.
在沟道区的中央沟道部分上形成具有薄的栅氧化物膜的控制栅。
The metal oxide layer may have a gradually changing metal content between the channel layer and the source and the drain.
该金属氧化物层可以在该沟道层与该源极和该漏极之间具有渐变的金属含量。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
High mobility P-channel power metal oxide semiconductor field effect transistors.
高迁移率的P -沟道功率金属氧化物半导体场效应晶体管。
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