This work demonstrates that the CSD technique has more advantages for fabricating complex oxide films such as CCTO.
这项工作表明化学溶液沉积法在制备复杂的氧化物膜上具有很大的优势。
Moreover, we have tried to control the microstructure by designing CCTO-based composite to facilitate its practical application in capacitors and varistors.
并通过配方设计，实现结构控制，推进CCTO在电容器材料以及压敏电阻材料方面的实际应用。
On the other hand, the main problems for the application of CCTO are its high dielectric loss, low breakdown voltage and compatively small I-V nonlinear coefficient.
此外，其较大的介电损耗、较低的压敏电压以及较小的宏观I-V非线性系数限制了其实用化。
The CCTO films prepared with different preheating temperature after rapid thermal annealing treatment have the smaller dielectric loss, and the values lie in between 0.1~0.35.
不同预烧温度所制备的CCTO薄膜，经快速热退火处理后，其介电损耗值较小，基本在0.1~0.35之间。
The CCTO films prepared with different preheating temperature after rapid thermal annealing treatment have the smaller dielectric loss, and the values lie in between 0.1~0.35.
不同预烧温度所制备的CCTO薄膜，经快速热退火处理后，其介电损耗值较小，基本在0.1~0.35之间。
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