It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.
结果表明，当注入水平较高时，少子扩散长度的测量值变长。
Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles.
以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。
The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.
本文改进了常规表面光电压测试少子扩散长度法，采用环形下电极消除了薄样品背面光电压信号对测量结果的影响；
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.
本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。
应用推荐