• It is shown that the measured minority carrier diffusion length increases with the injection level when the latter is high.

    结果表明,当注入水平较高时,少子扩散长度的测量值变长。

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  • Numerical results indicate how the various parameters such as bulk resistivity and carrier diffusion length in the active region affect the profiles.

    以数值结果揭示外延层的体电阻率及厚度、活性区载流子的扩散长度、模增益和丝区宽度等参量对上述各种分布的影响。

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  • The authors improved the routine steady-state surface photovoltage method to measure minority carrier diffusion length in both sides polished silicon wafers.

    本文改进了常规表面光电压测试少子扩散长度法,采用环形下电极消除了薄样品背面光电压信号对测量结果的影响;

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  • The root cause of data remanence of SRAM is determined which is the decrease of excess-carrier recombination rate and carrier diffusion velocity at low temperature.

    确定了低温下非平衡载流子复合率及扩散速度的降低,是导致SRAM断电后数据残留的主要原因。

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  • Using the photovoltaic spectral response of epitaxial P-N junction, the paper suggests a method of determining the minority carrier diffusion length in N layer of N/P epitaxial silicon wafer.

    本文提出了用N/P硅外延片的结光电压光谱响应确定N/P硅外延片中少子扩散长度的方法。

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  • Taking the effects of space charge and carrier diffusion as well as injected current pulse width into account, an analytic expression of a transit angle of 8 mm Si DDR IMPATT diode is derived.

    在考虑载流子的空间电荷效应、扩散效应和注入电流脉宽情况下,推导了双漂移崩越二极管的渡越角表达式。

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  • CONCLUSION The transport of recombinant hirudin across xenopus pulmonary membrane was a passive diffusion process which was energy-independent and carrier-independent.

    结论重组水蛭素经蟾蜍肺泡膜的转运是一个非能量依赖、非载体依赖的被动扩散过程。

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  • Recently, the research of the dependence of ion movement on ion diffusion and carrier gas velocity distribution in high strength electric field has achieved preliminary results.

    目前国内外对高电场中离子扩散、载气流速分布对离子运动行为的影响进行了大量的研究,取得了一定的研究成果。

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  • Recently, the research of the dependence of ion movement on ion diffusion and carrier gas velocity distribution in high strength electric field has achieved preliminary results.

    目前国内外对高电场中离子扩散、载气流速分布对离子运动行为的影响进行了大量的研究,取得了一定的研究成果。

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