• The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.

    模拟结果表明,改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C -V特性及记忆窗口。

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  • The scripting layer represents a runtime execution context for C# or Visual Basic snippets of code.

    脚本层代表的是C#或者VisualBasic代码片段的运行时执行上下文(runtime execution context)。

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  • While Microsoft is encouraging developers to build the core of their applications using F#, for the presentation layer they are recommending VB and C# be used. Don Syme continues

    虽然微软鼓励开发人员使用F#来构建应用程序的核心,但对于呈现层他们还是推荐使用VB和C#。

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  • The next article in this series describes the Drupal database abstraction layer, and how DB2 Express-C could be used as an alternative to MySQL or PostgreSQL.

    本系列中的下一篇文章描述Drupal数据库抽象层,以及如何使用DB 2 Express- c替代mysql或PostgreSQL。

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  • The experiments were made possible by a novel, one-layer ion trap cooled to minus 269 C (minus 452 F) with a liquid helium bath.

    实验利用了一种单层离子势阱,并将其浸在液氦浴中冷却到零下269摄氏度。

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  • The localities with maximum root dry weight in every layer of C distributed like a bow with vertical taproot as bowstring, and those of cotton in C-W were farther from cotton plant.

    随土层深度增加,若以棉花主茎垂直向下比喻为弓弦,则单作棉根干重的空间变化呈弓背形分布,而套作棉各土层根干重最大值出现的位点逐渐远离棉株。

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  • The unsuitable carbonitriding process, internal oxidation, over deep depth of carbonitrided layer and crust like C N compound on the surface are the main reasons to cause fracture.

    碳氮共渗工艺选择不当,共渗层过深,表面出现壳状碳氮化合物、内氧化等缺陷组织是造成其断裂的主要原因。

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  • When carburized under high carbon potential (1. 1% C), microcracks tend to appear on the martensitic matrix near the outer surface of the layer.

    表面碳势为1.1%C的渗碳硬化层内,临近外表面部位的枣核马氏体中会出现显微裂纹。

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  • The main structure changes in the creep process were fiber rearrangement, the oxidation of the C-rich interfacial layer and crystal growth within the matrix.

    蠕变过程中出现的主要结构变化为纤维重排、富碳界面层的氧化以及基质中晶体的生长。

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  • Preheat oven to 170 c. Combine all ingredients together and set aside overnight. Spread a very thin layer on a silicone baking mat.

    烤箱预热至170。混合以上所有材料并放置一晚后将材料薄薄的一层铺再烤盘纸上入烤箱烘培。

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  • C. Vibration strike: it is used in drilling and casing with loosen sand, cobble stone and gravel layer etc.

    振动击打:用于松散的砂、卵石、碎石地层的钻进及下套管等。

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  • The paper introduces a new kind of single layer A. C. winding and compares its characteristics with traditional single layer winding.

    介绍了一种新型的单层交流绕组,通过与传统单层绕组的对比,对该绕组的特点进行分析。

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  • The relationship between thickness of oxidized layer and time agrees with c.

    测出的氧化层厚度和时间的关系遵循c。

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  • The algorithm based on C Tree can complete the polygon selection and combination operation in high efficiency for given large scale polygon map layer and small output scale.

    对于给定的大比例尺地图多边形图层数据,该算法可以高效率地完成多边形选取与合并的综合操作,输出小比例尺地图图层数据。

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  • It was observed by microscopy that each layer of the retina structure was intact in group A, and there was retinal detachment in group B and group C.

    显微镜观察显示A组眼球视网膜各层组织结构完整,B组和C组视网膜均有断层、分离和脱片等现象。

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  • Three C / S structure is divided into application layer, the functional layer and data layer three parts.

    三层C/S结构是将应用功能分成表示层、功能层和数据层三部分。

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  • The bottom hardware driver is written by Lingyang chip microcomputer AL and the USB protocol & client layer application program written by Lingyang chip microcomputer C language.

    它的底层硬件驱动程序用凌阳单片机汇编语言编写,USB协议和应用层程序用凌阳单片机C语言编写。

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  • The surface layer consists of oxide, sulphide and N, C compound.

    表层由氧化物、硫化物和氮(碳)化合物组成;

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  • ArcGIS engine secondary development of small procedures, functions: add shp, lyr layer, delete layer, move layers, change the legend symbol, attribute query, Hawkeye, C#.

    详细说明:ArcGISengine二次开发的小程序,功能:添加shp、lyr图层,删除图层,移动图层,更改图例符号,属性查询,鹰眼,C#。

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  • A function between the velocity distribution of boundary layer and referential c…

    得到了黑石礁湾测站区域潮流海底边界层流速分布半径验公式。

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  • The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.

    比较了外延生长参数,如生长温度、生长压强、碳硅比和气流流速,与生长率和净载流子浓度的影响关系。

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  • The influence of growth parameters including gas flow, C/Si ratio, growth temperature and pressure on growth rate and layer uniformity in thickness and doping are discussed.

    比较了外延生长参数,如生长温度、生长压强、碳硅比和气流流速,与生长率和净载流子浓度的影响关系。

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