C-V characteristic data are shown by Numerical Calculations.
通过数值计算给出一些对了解C - V特性有用的数据。
The equipment mostly check up background currents, leakage-current, dynamic impedance and C-V characteristic etc.
该设备主要检测晶片、芯片的背景电流、漏电流、动态阻抗和C-V特性等参数，使之满足探测器要求。
The simulation results show that the improved model can predict the polarization behavior of ferroelectric layer, the C-V characteristic and memory window of MFIS capacitor more accurately.
模拟结果表明，改进模型能够更精确地预测MF IS电容器铁电层的极化行为、电容器的C - V特性及记忆窗口。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
It's shown that the C-V and I-V characteristics of silicon photovoltaic diode by forward bias are obviously different from forward characteristic of common PN junction diode by experiment.
通过实验发现高阻衬底浅结的紫外敏感硅光伏二极管的正向偏置c - V特性和I - V特性与一般PN结二极管的正向特性有明显地不同。
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