The 2-D potential model of partial buried oxide VDMOS is obtained in paper.
提出具有部分埋氧结构的功率VDMOS器件的二维势模型。
The quality of SOI wafer mainly depends on the structure of Top-Si as well as BOX (Buried Oxide).
SOI材料的质量很大程度上取决于顶层硅及埋层的结构。
A novel structure with a double step buried oxide SOI (D-SBOSOI) is developed on the basis of single step buried oxide structure.
在单面阶梯埋氧型soi结构的基础上，提出了一种双面阶梯埋氧soi新结构。
Substituting the electric field distributions into the formula we ve induced, we got the trapped charge distribution inside the buried oxide during total irradiation under different bias states.
通过对载流子扩散机理的研究，由数学公式的推导，得到陷阱电荷分布随电场变化的函数关系。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金属氧化物半导体场效应晶体管(MOSFET)的作品在一个类似的原则，但二极管的MOSFET内掩埋。
I tried to imagine those sheep farmers with their backs to the wind, buried under oxide red sand, waiting years for rain.
那些养羊的农民们，面朝红土背朝天，成年累月的等待着雨水降临，那该是多么令人绝望的一幕。
I tried to imagine those sheep farmers with their backs to the wind, buried under oxide red sand, waiting years for rain.
那些养羊的农民们，面朝红土背朝天，成年累月的等待着雨水降临，那该是多么令人绝望的一幕。
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