The new structure features high breakdown voltage, low on-resistance , and charge balance in the drift region.
结果表明这种结构具有高的击穿电压、低的导通电阻和漂移区中电荷平衡的特点。
The dependence of breakdown voltages of the thin film SOI devices on the concentration gradient in the linearly doped drift region is experimentally investigated for the first time.
首次对薄膜SOI功率器件的击穿电压与线性掺杂漂移区的杂质浓度梯度的关系进行了实验研究。
The condition that plasma breakdown on Tokmak is get enough high loop voltage and large null field region in the vacuum vessel area.
托卡马克装置产生等离子体击穿的条件是在真空室区域中达到足够大的环电压以及尽可能大的零场区。
In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
为了获得SOI -LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。
In order to obtain good compromise of the breakdown voltage and the specific on-resistance of SOI-LDMOS, a SOI-LDMOS with trench oxide in drift region is proposed.
为了获得SOI -LDMOS器件耐压和比导通电阻的良好折衷，提出了一种漂移区槽氧soi - LDMOS高压器件新结构。
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