The Source-Measure Unit can also test other diode parameters, including forward voltage drop and breakdown voltage.
源-测量单元还可以测量其它的二极管参数，包括正向电压降和击穿电压。
Measure the reverse breakdown voltage by sourcing a specified re verse current bias, then measuring the voltage drop across the diode.
通过施加规定的反向偏流，然后测量二极管两端的电压，即可测得反向偏置电流。
For maximum exceed noise ratio generated, circuit structure to match the equivalent circuit diagram of the solid-state noise diode in avalanche breakdown state has been designed.
根据固态噪声二极管在雪崩击穿状态的等效电路，设计出与之匹配的电路结构，以实现超噪比的最大输出。
Voltage regulator diode. Working voltage (nom) 180 V. Transient suppressor diode. Reverse breakdown voltage 168 v.
稳压二极管。工作电压(名称)180 V。瞬态抑制二极管。反向击穿电压168V。
But as concerning microwave PIN diode of high breakdown voltage, the craft can't already meet the demands.
但就制备高反向击穿电压的微波pin二极管而言，这些工艺已不能满足要求。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
When the diode is reverse biased, only a negligibly small leakage current flows through the device until the reverse breakdown voltage is reached.
当二极管反向偏置时，仅有很小的、可忽略的漏电流流过，除非是达到反向击穿电压。
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