This instrument has been used for measuring the sheet resistance distribution for Boron diffusion chip.
并用该仪器测定了硼扩散片的薄层电阻分布。
Different boron diffusion rates can be produced in the lateral and vertical directions and diffusion rates comparable to arsenic can be achieved.
可以在横向和垂直方向中产生不同的硼扩散速率，并且可以实现与砷可比的扩散速率。
Some treatment parameters led to boron carbon coating above the boride layer which ACTS as a diffusion barrier and prevents a further growth of the boride layer.
一些处理参数会导致在硼化物层上形成硼-碳层，它将起着扩散垒的作用，阻止了硼化物进一步的生长。
The experimental results show that the anomalous diffusion of implanted boron is caused byimplantation damages rather than fast diffusion of interstitial boron.
结果表明，引起注入硼异常扩散的是点缺陷，而不是硼间隙原子的快扩散。
The analysis indicates that cold plastic deformation results in crystal lattice defects, which facilitates the absorption and diffusion of boron atoms.
分析认为，冷塑性变形可使位错等缺陷增加，有利于硼原子的吸收与扩散。
In addition, the transient enhanced diffusion during the rapid annealing of boron implanted silicon has also been discussed.
本文还讨论了瞬态退火过程中的增强扩散效应。
In addition, the transient enhanced diffusion during the rapid annealing of boron implanted silicon has also been discussed.
本文还讨论了瞬态退火过程中的增强扩散效应。
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