Thus it is very important to investigate the behavior of oxygen and oxygen precipitation in heavily boron-doping Czochralski silicon (CZSi).
因此研究重掺硼硅单晶中氧和氧沉淀行为具有非常重要的意义，是目前硅材料界研究的热点之一。
The boron-doping technology and metallurgical micro-structure of die steel are discussed from the angle of its resistance to repeated shock compression.
结果指出：模具钢渗硼层在多次冲击压缩载荷下发生一定的塑性变形。
On the basis of analyzing the semiconducting material removal rate of EDM and making semiconductive modification for CVD diamond thick film by boron-doping, EDM of the thick diamond film was realized.
本文在分析了电火花加工半导体材料去除速率的基础上，通过掺硼对CVD金刚石厚膜进行半导体改性，继而实现了其电火花加工。
It is indicated that the boron doping promotes the growth of (111) face of the diamonds, enhances acceptor level, narrow 's band gap and increases carrier concentration correspondingly.
其原因是硼元素的掺入促进了金刚石单晶的(111)晶面生长，使受主能级提高，晶体的带隙变窄，载流子浓度提高。
Our company is the only boron doping source company in China. The product has awarded "national science technology progress third class".
我公司是国内唯一一家研制生产硼源片的企业，该产品曾荣获国家科学技术进步三等奖。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
Both P-type and N-type crystalline si have been doped using arsenic, phosphor and boron. The electrical and opto-electrical characteristics of the doping area are investigated.
型和N型两种硅单晶进行了砷、磷和硼的掺杂，并研究了掺杂区的电和光电特性。
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