The structure of a vertical multiple-gate MOSFET based on bipolar technology is presented.
提出了一种基于双极工艺的纵向多面栅MOSFET的结构和工艺。
A new device structure of silicon bipolar microwave power transistors with so called tree overlay geometry polysilicon emitter has been designed.
设计了一种称之为多晶硅覆盖树技状结构的双极型微波功率晶体管。
Plastic capsulation power bipolar transistor exists many reliability problems due to the structure and package style.
由于其自身的结构与封装形式，塑封双极型功率管存在很多可靠性问题。
The paper analyses the electric circuit and the working principle of the avalanche of the bipolar transistor of the pulser with a cascade connected bipolar transistor structure.
讨论了采用级联双极性晶体管结构的超宽带极脉冲发生器，并对其电路及双极性晶体管雪崩的工作原理进行了具体分析。
The main structure and key performance parameters of the bipolar transistor were studied and designed, it was taped out and tested.
对双极晶体管结构和关键性能参数进行了研究和设计，并进行了流片测试。
The structure of bipolar components of 38dd350 type ion-exchange membrane electrolyzer is introduced.
介绍了38dd350型离子膜电解槽复极元件的结构。
In this structure, a passivating layer (112) is positioned above the substrate (110), and between the vertical bipolar transistors (118) and the CMOS transistors (116).
在本结构中，钝化层(112)位于衬底(110)之上，在垂直双极型晶体管(118)和CMOS晶体管(116)之间。
The basic structure of AK modified bipolar ionic membrane element, its method of check and test, and essentials of repair were introduced.
介绍了旭化成复极单元槽的基本结构，检查试验方法和修理技术要领。
The structure of bipolar battery was analyzed and the sealing principle of the batteries was studied.
分析了双极性电池结构，进一步研究了电池的密封原理。
In 1991, the Soviet Union ended the bipolar US-Soviet strategic balance of power in the structure of the international system has undergone fundamental changes.
1991年，苏联解体结束了美苏两极的战略均势，国际体系的结构发生了根本性的变化。
In 1991, the Soviet Union ended the bipolar US-Soviet strategic balance of power in the structure of the international system has undergone fundamental changes.
1991年，苏联解体结束了美苏两极的战略均势，国际体系的结构发生了根本性的变化。
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