This flexing generates a negative potential at the feedback tab, which feeds back to the base of the transistor.
这个弯曲在反应标记上产生负电压，其反过来为晶体管的基极供电。
Regardless of type NPN or PNP-type tubes, the internal transistor has three areas, namely, the launch area, base, collector area, the three areas form two PN junction.
无论npn型还是PNP型管，三极管内部均有三个区、即发射区、基区、集电区，三个区形成两个PN结。
The ratio of effectual emitter area to base area of a FFJ is 2-3 times greater than a usual transistor and the output power-impedance product is 5-10 times greater.
与通常晶体管相比，FFJ的有效发射极面积对基极面积之比值提高2～3倍，输出功率-阻抗乘积提高5～10倍。
Note that the base of the transistor is not used; the transistor functions as a diode.
我们可以注意到，图中三极管的基极空接，被当做一个二极管使用。
The convergent characteristic of base data can be used to study the electrical character of transistor.
晶体管本底数据的汇聚特性可以用来研究晶体管的电学性质。
The power dual base transistor (DUBAT) has been designed and fabricated by increasing the breakdown voltage and current capacity of the device.
在重点考虑了提高击穿电压和增大电流容量的基础上，设计并研制出功率型dubat。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
We try to obtain the common-base current gain a of the parasitic PNP transistor from the eloping profile of the collector region including the effect of buried-layer.
本文从包括埋层影响的集区杂质分布出发，求出了寄生PNP晶体管的共基极电流放大系数。
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